Technical Specifications of HGT1S20N60A4S9A
| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | Fairchild Semiconductor |
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| Series | - |
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| Packaging | Tube |
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| IGBT Type | - |
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| Voltage - Collector Emitter Breakdown (Max) | 600V |
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| Current - Collector (Ic) (Max) | 70A |
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| Current - Collector Pulsed (Icm) | 280A |
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| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 20A |
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| Power - Max | 290W |
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| Switching Energy | 105μJ (on), 150μJ (off) |
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| Input Type | Standard |
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| Gate Charge | 142nC |
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| Td (on/off) @ 25°C | 15ns/73ns |
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| Test Condition | 390V, 20A, 3 Ohm, 15V |
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| Reverse Recovery Time (trr) | - |
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| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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| Mounting Type | Surface Mount |
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| Supplier Device Package | TO-263AB |
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