Technical Specifications of GT10G131(TE12L,Q)
| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| IGBT Type | - |
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| Voltage - Collector Emitter Breakdown (Max) | 400V |
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| Current - Collector (Ic) (Max) | - |
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| Current - Collector Pulsed (Icm) | 200A |
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| Vce(on) (Max) @ Vge, Ic | 2.3V @ 4V, 200A |
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| Power - Max | 1W |
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| Switching Energy | - |
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| Input Type | Standard |
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| Gate Charge | - |
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| Td (on/off) @ 25°C | 3.1μs/2μs |
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| Test Condition | - |
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| Reverse Recovery Time (trr) | - |
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| Package / Case | 8-SOIC (0.173", 4.40mm Width) |
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| Mounting Type | Surface Mount |
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| Supplier Device Package | 8-SOP (5.5x6.0) |
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