Technical Specifications of RJM0603JSC-00#13
| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Arrays |
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| Manufacturer | Renesas Electronics America |
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| Series | Automotive, AEC-Q101 |
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| Packaging | * |
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| FET Type | 3 N and 3 P-Channel (3-Phase Bridge) |
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| FET Feature | Logic Level Gate, 4.5V Drive |
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| Drain to Source Voltage (Vdss) | 60V |
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| Current - Continuous Drain (Id) @ 25°C | 20A |
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| Rds On (Max) @ Id, Vgs | 20 mOhm @ 10A, 10V |
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| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
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| Gate Charge (Qg) @ Vgs | 43nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 2600pF @ 10V |
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| Power - Max | 54W |
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| Operating Temperature | 175°C |
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| Mounting Type | * |
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| Package / Case | * |
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| Supplier Device Package | * |
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