Technical Specifications of 2SC4215-Y(TE85L,F)
Datasheet | 2SC4215-Y(TE85L,F) datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - Bipolar (BJT) - RF |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Frequency - Transition | 550MHz |
Noise Figure (dB Typ @ f) | 2dB ~ 5dB @ 100MHz |
Gain | 17dB ~ 23dB |
Power - Max | 100mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 6V |
Current - Collector (Ic) (Max) | 20mA |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | USM |
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