Technical Specifications of 2SC2714-Y(TE85L,F)
| Datasheet |  2SC2714-Y(TE85L,F) datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - RF |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | NPN |
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| Voltage - Collector Emitter Breakdown (Max) | 30V |
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| Frequency - Transition | 550MHz |
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| Noise Figure (dB Typ @ f) | 2.5dB @ 100MHz |
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| Gain | 23dB |
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| Power - Max | 100mW |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 6V |
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| Current - Collector (Ic) (Max) | 20mA |
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| Mounting Type | Surface Mount |
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| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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| Supplier Device Package | S-Mini |
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