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PDTD113ET,215
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
| Manufacturer Part Number | PDTD113ET,215 |
|---|---|
| Manufacturer | NXP Semiconductors |
| Description | TRANS PREBIAS NPN 250MW TO236AB |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| PDTD113ET,215 Price |  |
Technical Specifications of PDTD113ET,215
| Datasheet |  PDTD113ET,215 datasheet |
|---|---|
| Category | Discrete Semiconductor Products |
| Family | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Manufacturer | NXP Semiconductors |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) (Ohms) | 1k |
| Resistor - Emitter Base (R2) (Ohms) | 1k |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 33 @ 50mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | - |
| Power - Max | 250mW |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23 |
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