Technical Specifications of SIA429DJT-T1-GE3
| Datasheet |  SIA429DJT-T1-GE3 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Vishay Siliconix |
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| Series | TrenchFET? |
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| Packaging | Tape & Reel (TR) |
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| FET Type | MOSFET P-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 20V |
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| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
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| Rds On (Max) @ Id, Vgs | 20.5 mOhm @ 6A, 4.5V |
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| Vgs(th) (Max) @ Id | 1V @ 250μA |
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| Gate Charge (Qg) @ Vgs | 62nC @ 8V |
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| Input Capacitance (Ciss) @ Vds | 1750pF @ 10V |
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| Power - Max | 19W |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | PowerPAK? SC-70-6 |
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| Supplier Device Package | PowerPAK? SC-70-6 Single |
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