Technical Specifications of 2SC2705-O(TPE6,F)
Category | Discrete Semiconductor Products |
Family | Transistors - Bipolar (BJT) - Single |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Packaging | Tape & Box (TB) |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 50mA |
Voltage - Collector Emitter Breakdown (Max) | 150V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 1mA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Power - Max | 800mW |
Frequency - Transition | 200MHz |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 Long Body |
Supplier Device Package | LSTM |
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