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IPB029N06N3GE8187ATMA1
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| Manufacturer Part Number | IPB029N06N3GE8187ATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | MOSFET N-CH 60V 120A TO263-3 |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| IPB029N06N3GE8187ATMA1 Price |  |
Technical Specifications of IPB029N06N3GE8187ATMA1
| Datasheet |  IPB029N06N3GE8187ATMA1 datasheet |
|---|---|
| Category | Discrete Semiconductor Products |
| Family | Transistors - FETs, MOSFETs - Single |
| Manufacturer | Infineon Technologies |
| Series | OptiMOS? |
| Packaging | Tape & Reel (TR) |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2 mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 118μA |
| Gate Charge (Qg) @ Vgs | 165nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 13000pF @ 30V |
| Power - Max | 188W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | PG-TO263-3 |
