Technical Specifications of HN4B01JE(TE85L,F)
| Datasheet |  HN4B01JE(TE85L,F) datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Arrays |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | NPN, PNP (Emitter Coupled) |
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| Current - Collector (Ic) (Max) | 150mA |
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| Voltage - Collector Emitter Breakdown (Max) | 50V |
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| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
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| Current - Collector Cutoff (Max) | 100nA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 10MA, 100MA |
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| Power - Max | 100mW |
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| Frequency - Transition | 80MHz |
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| Mounting Type | Surface Mount |
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| Package / Case | SOT-553 |
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| Supplier Device Package | ESV |
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