Technical Specifications of MMDT5551-7-F
| Datasheet |  MMDT5551-7-F datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Arrays |
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| Manufacturer | Diodes Incorporated |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Part Status | Active |
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| Transistor Type | 2 NPN (Dual) |
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| Current - Collector (Ic) (Max) | 200mA |
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| Voltage - Collector Emitter Breakdown (Max) | 160V |
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| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
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| Current - Collector Cutoff (Max) | 50nA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
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| Power - Max | 200mW |
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| Frequency - Transition | 300MHz |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | 6-TSSOP, SC-88, SOT-363 |
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| Supplier Device Package | SOT-363 |
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