Technical Specifications of 2N5109
| Datasheet |  2N5109 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - RF |
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| Manufacturer | Microsemi Corporation |
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| Series | - |
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| Packaging | Bulk |
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| Transistor Type | NPN |
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| Voltage - Collector Emitter Breakdown (Max) | 20V |
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| Frequency - Transition | 1.2GHz |
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| Noise Figure (dB Typ @ f) | - |
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| Gain | 12dB |
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| Power - Max | 2.5W |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 15V |
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| Current - Collector (Ic) (Max) | 400mA |
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| Mounting Type | Through Hole |
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| Package / Case | TO-205AD, TO-39-3 Metal Can |
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| Supplier Device Package | TO-39 |
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