Technical Specifications of TC58BYG0S3HBAI6
| Datasheet |  TC58BYG0S3HBAI6 datasheet |
|---|
| Category | Integrated Circuits (ICs) |
|---|
| Family | Memory |
|---|
| Manufacturer | Toshiba Semiconductor and Storage |
|---|
| Series | Benand? |
|---|
| Packaging | Tray |
|---|
| Part Status | Active |
|---|
| Format - Memory | EEPROMs - Serial |
|---|
| Memory Type | EEPROM - NAND |
|---|
| Memory Size | 1G (128M x 8) |
|---|
| Speed | 25ns |
|---|
| Interface | Parallel |
|---|
| Voltage - Supply | 1.7 V ~ 1.95 V |
|---|
| Operating Temperature | -40°C ~ 85°C (TA) |
|---|
| Package / Case | 67-VFBGA |
|---|
| Supplier Device Package | 67-VFBGA (6.5x8) |
|---|
We can supply Toshiba Semiconductor and Storage part# TC58BYG0S3HBAI6. Use the request quote form to request TC58BYG0S3HBAI6 pirce and lead time. RANTLE EAST ELECTRONIC - ICRFQ.com is an independent stocking distributor of electronic components. With 5+ Million line items of available electronic components can ship in short lead-time, over 300 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TC58BYG0S3HBAI6. The price and lead time for TC58BYG0S3HBAI6 depending on the quantity required, availability and warehouse location. Contact us today and our sales representative will provide you price and delivery on Part# TC58BYG0S3HBAI6. We look forward to doing business with you.
Start With
Include With
