Technical Specifications of HN1B04F(TE85L,F)
Datasheet | HN1B04F(TE85L,F) datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - Bipolar (BJT) - Arrays |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN, PNP |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 100mA, 1V |
Power - Max | 300mW |
Frequency - Transition | 200MHz |
Mounting Type | Surface Mount |
Package / Case | SC-74, SOT-457 |
Supplier Device Package | SM6 |
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