Technical Specifications of FJP2160DTU
| Datasheet |  FJP2160DTU datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Fairchild Semiconductor |
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| Series | ESBC? |
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| Packaging | Tube |
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| Transistor Type | NPN |
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| Current - Collector (Ic) (Max) | 2A |
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| Voltage - Collector Emitter Breakdown (Max) | 800V |
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| Vce Saturation (Max) @ Ib, Ic | 750mV @ 330mA, 1A |
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| Current - Collector Cutoff (Max) | 100μA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 400mA, 3V |
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| Power - Max | 100W |
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| Frequency - Transition | 5MHz |
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| Mounting Type | Through Hole |
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| Package / Case | TO-220-3 |
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| Supplier Device Package | TO-220-3 |
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