Technical Specifications of BDV64C-S
| Category | Discrete Semiconductor Products |
| Family | Transistors - Bipolar (BJT) - Single |
| Manufacturer | Bourns Inc. |
| Series | - |
| Packaging | Tube |
| Transistor Type | PNP - Darlington |
| Current - Collector (Ic) (Max) | 12A |
| Voltage - Collector Emitter Breakdown (Max) | 120V |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 20mA, 5A |
| Current - Collector Cutoff (Max) | 2mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 4V |
| Power - Max | 3.5W |
| Frequency - Transition | - |
| Mounting Type | Through Hole |
| Package / Case | TO-218-3 |
| Supplier Device Package | SOT-93 |
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