Technical Specifications of BD539B-S
| Category | Discrete Semiconductor Products |
| Family | Transistors - Bipolar (BJT) - Single |
| Manufacturer | Bourns Inc. |
| Series | - |
| Packaging | Tube |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 5A |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1A, 5A |
| Current - Collector Cutoff (Max) | 300μA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 12 @ 3A, 4V |
| Power - Max | 2W |
| Frequency - Transition | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220 |
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