Technical Specifications of 2SC3649S-TD-E
| Datasheet |  2SC3649S-TD-E datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | ON Semiconductor |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | NPN |
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| Current - Collector (Ic) (Max) | 1.5A |
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| Voltage - Collector Emitter Breakdown (Max) | 160V |
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| Vce Saturation (Max) @ Ib, Ic | 450mV @ 50mA, 500mA |
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| Current - Collector Cutoff (Max) | 1μA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
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| Power - Max | 500mW |
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| Frequency - Transition | 120MHz |
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| Mounting Type | Surface Mount |
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| Package / Case | TO-243AA |
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| Supplier Device Package | PCP |
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