Technical Specifications of SI4310BDY-T1-E3
| Datasheet | SI4310BDY-T1-E3 datasheet |
| Category | Discrete Semiconductor Products |
| Family | Transistors - FETs, MOSFETs - Arrays |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET? |
| Packaging | Tape & Reel (TR) |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A, 9.8A |
| Rds On (Max) @ Id, Vgs | 11 mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Gate Charge (Qg) @ Vgs | 18nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 2370pF @ 15V |
| Power - Max | 1.14W, 1.47W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 14-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 14-SOICN |
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