Technical Specifications of TPCF8A01(TE85L)
| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Cut Tape (CT) |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Diode (Isolated) |
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| Drain to Source Voltage (Vdss) | 20V |
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| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
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| Rds On (Max) @ Id, Vgs | 49 mOhm @ 1.5A, 4.5V |
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| Vgs(th) (Max) @ Id | 1.2V @ 200μA |
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| Gate Charge (Qg) @ Vgs | 7.5nC @ 5V |
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| Input Capacitance (Ciss) @ Vds | 590pF @ 10V |
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| Power - Max | - |
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| Operating Temperature | 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | 8-SMD, Flat Lead |
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| Supplier Device Package | VS-8 (2.9x1.9) |
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