Technical Specifications of SCH2080KEC
Datasheet | SCH2080KEC datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Rohm Semiconductor |
Series | - |
Packaging | Tube |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
Rds On (Max) @ Id, Vgs | 117 mOhm @ 10A, 18V |
Vgs(th) (Max) @ Id | 4V @ 4.4mA |
Gate Charge (Qg) @ Vgs | 106nC @ 18V |
Input Capacitance (Ciss) @ Vds | 1850pF @ 800V |
Power - Max | 262W |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247 |
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