Home > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > BSB104N08NP3GXUSA1
BSB104N08NP3GXUSA1
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| Manufacturer Part Number | BSB104N08NP3GXUSA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | MOSFET N-CH 80V 13A 2WDSON |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| BSB104N08NP3GXUSA1 Price | ![]() |
Technical Specifications of BSB104N08NP3GXUSA1
| Datasheet | |
|---|---|
| Category | Discrete Semiconductor Products |
| Family | Transistors - FETs, MOSFETs - Single |
| Manufacturer | Infineon Technologies |
| Series | OptiMOS? |
| Packaging | Tape & Reel (TR) |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.4 mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 40μA |
| Gate Charge (Qg) @ Vgs | 31nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 2100pF @ 40V |
| Power - Max | 2.8W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 3-WDSON |
| Supplier Device Package | MG-WDSON-2, CanPAK M? |







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