Home > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > IPB180N04S4LH0ATMA1
IPB180N04S4LH0ATMA1
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| Manufacturer Part Number | IPB180N04S4LH0ATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | MOSFET N-CH TO263-7 |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| IPB180N04S4LH0ATMA1 Price | ![]() |
Technical Specifications of IPB180N04S4LH0ATMA1
| Datasheet | |
|---|---|
| Category | Discrete Semiconductor Products |
| Family | Transistors - FETs, MOSFETs - Single |
| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS? |
| Packaging | Tape & Reel (TR) |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1 mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 180μA |
| Gate Charge (Qg) @ Vgs | 310nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 24440pF @ 25V |
| Power - Max | 250W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-7, D2Pak (6 Leads + Tab) |
| Supplier Device Package | PG-TO263-7-3 |







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