Technical Specifications of 2SK1119(F)
| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Tube |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 1000V (1kV) |
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| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
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| Rds On (Max) @ Id, Vgs | 3.8 Ohm @ 2A, 10V |
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| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
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| Gate Charge (Qg) @ Vgs | 60nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 700pF @ 25V |
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| Power - Max | 100W |
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| Operating Temperature | 150°C (TJ) |
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| Mounting Type | Through Hole |
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| Package / Case | TO-220-3 |
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| Supplier Device Package | TO-220AB |
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