Technical Specifications of NP100P06PDG-E1-AY
| Datasheet |  NP100P06PDG-E1-AY datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Renesas Electronics America |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| FET Type | MOSFET P-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 60V |
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| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
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| Rds On (Max) @ Id, Vgs | 6 mOhm @ 50A, 10V |
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| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
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| Gate Charge (Qg) @ Vgs | 300nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 15000pF @ 10V |
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| Power - Max | 1.8W |
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| Operating Temperature | 175°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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| Supplier Device Package | TO-263 |
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