Technical Specifications of BUZ31L H
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Infineon Technologies |
Series | SIPMOS? |
Packaging | Tube |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 13.5A (Tc) |
Rds On (Max) @ Id, Vgs | 200 mOhm @ 7A, 5V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Gate Charge (Qg) @ Vgs | - |
Input Capacitance (Ciss) @ Vds | 1600pF @ 25V |
Power - Max | 95W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | PG-TO220-3 |
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