Technical Specifications of PMEG6010AESBYL
| Datasheet |  PMEG6010AESBYL datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Diodes - Rectifiers - Single |
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| Manufacturer | NXP Semiconductors |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Diode Type | Schottky |
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| Voltage - DC Reverse (Vr) (Max) | 60V |
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| Current - Average Rectified (Io) | 1A |
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| Voltage - Forward (Vf) (Max) @ If | 625mV @ 1A |
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| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
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| Reverse Recovery Time (trr) | 2.4ns |
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| Current - Reverse Leakage @ Vr | 650μA @ 60V |
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| Capacitance @ Vr, F | 20pF @ 10V, 1MHz |
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| Mounting Type | Surface Mount |
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| Package / Case | 2-XDFN |
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| Supplier Device Package | DSN1006-2 |
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| Operating Temperature - Junction | 150°C (Max) |
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