Technical Specifications of IXBX50N360HV
| Datasheet |  IXBX50N360HV datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | IXYS |
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| Series | BIMOSFET? |
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| Packaging | Tube |
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| IGBT Type | - |
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| Voltage - Collector Emitter Breakdown (Max) | 3600V |
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| Current - Collector (Ic) (Max) | 125A |
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| Current - Collector Pulsed (Icm) | 420A |
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| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 50A |
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| Power - Max | 660W |
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| Switching Energy | - |
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| Input Type | Standard |
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| Gate Charge | 210nC |
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| Td (on/off) @ 25°C | 46ns/205ns |
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| Test Condition | 960V, 50A, 5 Ohm, 15V |
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| Reverse Recovery Time (trr) | 1.7μs |
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| Package / Case | TO-247-3 |
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| Mounting Type | Through Hole |
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| Supplier Device Package | TO-247-3 |
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