Navigation
Home
About us
Products
Manufacturers
RFQ
Service
FAQ
Contact us
ICRFQ.com - Electronic Components Distributor in China Since 2003
We make your sourcing easier!
Get A Fast Quote Worldwide!
[email protected]
Home > Products > Discrete Semiconductor > Diodes - Rectifiers - Single > JAN1N6625US

JAN1N6625US

Manufacturer Part Number JAN1N6625US
Manufacturer Microsemi IRE Division
Description DIODE GEN PURP 1.1KV 1A D5A
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
JAN1N6625US Price

Technical Specifications of JAN1N6625US

CategoryDiscrete Semiconductor Products
FamilyDiodes - Rectifiers - Single
ManufacturerMicrosemi IRE Division
SeriesMilitary, MIL-PRF-19500/585
PackagingBulk
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)1100V (1.1kV)
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1.75V @ 1A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)60ns
Current - Reverse Leakage @ Vr1μA @ 1100V
Capacitance @ Vr, F10pF @ 10V, 1MHz
Mounting TypeSurface Mount
Package / CaseSQ-MELF, A
Supplier Device PackageD-5A
Operating Temperature - Junction-65°C ~ 150°C
<   Previous Product Next Product   >
Home > Products

Electronic Components and Parts

JAN1N6625US

Manufacturer Part Number JAN1N6625US
Manufacturer Microsemi IRE Division
Description DIODE GEN PURP 1.1KV 1A D5A
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
JAN1N6625US Price

Technical Specifications of JAN1N6625US

CategoryDiscrete Semiconductor Products
FamilyDiodes - Rectifiers - Single
ManufacturerMicrosemi IRE Division
SeriesMilitary, MIL-PRF-19500/585
PackagingBulk
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)1100V (1.1kV)
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1.75V @ 1A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)60ns
Current - Reverse Leakage @ Vr1μA @ 1100V
Capacitance @ Vr, F10pF @ 10V, 1MHz
Mounting TypeSurface Mount
Package / CaseSQ-MELF, A
Supplier Device PackageD-5A
Operating Temperature - Junction-65°C ~ 150°C
We can supply Microsemi IRE Division part# JAN1N6625US. Use the request quote form to request JAN1N6625US pirce and lead time. RANTLE EAST ELECTRONIC - ICRFQ.com is an independent stocking distributor of electronic components. With 5+ Million line items of available electronic components can ship in short lead-time, over 300 thousand part numbers of electronic components in stock for immediately delivery, which may include part number JAN1N6625US. The price and lead time for JAN1N6625US depending on the quantity required, availability and warehouse location. Contact us today and our sales representative will provide you price and delivery on Part# JAN1N6625US. We look forward to doing business with you.

Related parts for JAN1N6625US

SIT3808AI-2-18EX
SIT3808AI-2-18EX
SiTIME
1MHz ~ 80MHz LVCMOS, LVTTL MEMS VCXO Programmable Oscillator Surface Mount 1.8V 31mA Enable/Disable

CS325-37.050MABJ-UT
CS325-37.050MABJ-UT
Citizen Finedevice Co Ltd
37.05MHz ±30ppm Crystal 18pF 50 Ohm -10°C ~ 60°C Surface Mount 4-SMD, No Lead (DFN, LCC)

ASTMHTD-14.7456MHZ-ZC-E-T3
ASTMHTD-14.7456MHZ-ZC-E-T3
Abracon LLC
14.7456MHz LVCMOS MEMS (Silicon) Oscillator Surface Mount 2.25 V ~ 3.63 V Enable/Disable

SIT8008AIR3-28E
SIT8008AIR3-28E
SiTIME
1MHz ~ 110MHz HCMOS, LVCMOS MEMS (Silicon) Programmable Oscillator Surface Mount 2.8V 4.5mA Enable/Disable

DSC1121CM2-027.0000
DSC1121CM2-027.0000
Microchip Technology
27MHz CMOS MEMS (Silicon) Oscillator Surface Mount 2.25 V ~ 3.6 V 35mA Enable/Disable

SIT9002AI-08N25DT
SIT9002AI-08N25DT
SiTIME
1MHz ~ 220MHz LVPECL MEMS (Silicon) Programmable Oscillator Surface Mount 2.5V 84mA

CSTCR4M19G53-R0
CSTCR4M19G53-R0
Murata Electronics North America
4.19MHz Ceramic Resonator Built in Capacitor 15pF ±0.2% 60 Ohm -20°C ~ 80°C Surface Mount

445C3XC24M57600
445C3XC24M57600
CTS-Frequency Controls
24.576MHz ±30ppm Crystal 16pF 40 Ohm -20°C ~ 70°C Surface Mount 2-SMD

OXKTGLJANF-26.000000
OXKTGLJANF-26.000000
Taitien
26MHz CMOS XO (Standard) Oscillator Surface Mount 1.8V 5mA Enable/Disable

1N5224B-TR
1N5224B-TR
Vishay Semiconductor Diodes Division
DIODE ZENER 2.8V 500MW DO35

2N5952_D75Z
2N5952_D75Z
Fairchild Semiconductor
FET RF 30V 1KHZ TO-92

BLF7G27L-150P,112
BLF7G27L-150P,112
Ampleon USA Inc.
TRANS LDMOS SOT539A

30CTQ060STRL
30CTQ060STRL
Vishay Semiconductor Diodes Division
DIODE ARRAY SCHOTTKY 60V D2PAK

2SC4488T-AN
2SC4488T-AN
ON Semiconductor
TRANS NPN 100V 1A NMP

CZRL5232B-G
CZRL5232B-G
Comchip Technology
DIODE ZENER 5.6V 500MW SOD80

MMBZ5252C-HE3-18
MMBZ5252C-HE3-18
Vishay Semiconductor Diodes Division
DIODE ZENER 24V 225MW SOT23-3

SZMM3Z27VT1G
SZMM3Z27VT1G
ON Semiconductor
DIODE ZENER 27V 300MW SOD323

RS3KB-13
RS3KB-13
Diodes Incorporated
DIODE GEN PURP 800V 3A SMB

STTH3010GY-TR
STTH3010GY-TR
STMicroelectronics
DIODE GEN PURP 1KV 30A D2PAK

PZU11B3,115
PZU11B3,115
NXP Semiconductors
DIODE ZENER 11V 310MW SOD323F

<   Previous Product Next Product   >

Related keywords for JAN1N6625US