Technical Specifications of IPI200N15N3 G
Datasheet | IPI200N15N3 G datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Infineon Technologies |
Series | OptiMOS? |
Packaging | Tube |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id | 4V @ 90μA |
Gate Charge (Qg) @ Vgs | 31nC @ 10V |
Input Capacitance (Ciss) @ Vds | 1820pF @ 75V |
Power - Max | 150W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
Supplier Device Package | PG-TO262-3 |
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