Technical Specifications of NSB8MTHE3_A/P
| Datasheet |  NSB8MTHE3_A/P datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Diodes - Rectifiers - Single |
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| Manufacturer | Vishay Semiconductor Diodes Division |
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| Series | Automotive, AEC-Q101 |
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| Packaging | Tube |
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| Diode Type | Standard |
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| Voltage - DC Reverse (Vr) (Max) | 1000V (1kV) |
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| Current - Average Rectified (Io) | 8A |
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| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 8A |
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| Speed | Standard Recovery >500ns, > 200mA (Io) |
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| Reverse Recovery Time (trr) | - |
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| Current - Reverse Leakage @ Vr | 10μA @ 1000V |
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| Capacitance @ Vr, F | 55pF @ 4V, 1MHz |
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| Mounting Type | Surface Mount |
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| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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| Supplier Device Package | TO-263AB |
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| Operating Temperature - Junction | -55°C ~ 150°C |
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