Start With
Include WithHome > Products > Discrete Semiconductor > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > EMD4T2R
EMD4T2R
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
| Manufacturer Part Number | EMD4T2R |
|---|---|
| Manufacturer | Rohm Semiconductor |
| Description | TRANS NPN/PNP PREBIAS 0.15W EMT6 |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| EMD4T2R Price |  |
Technical Specifications of EMD4T2R
| Datasheet |  EMD4T2R datasheet |
|---|---|
| Category | Discrete Semiconductor Products |
| Family | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Manufacturer | Rohm Semiconductor |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) (Ohms) | 47k, 10k |
| Resistor - Emitter Base (R2) (Ohms) | 47k |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500μA, 10mA / 300mV @ 250μA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | 250MHz |
| Power - Max | 150mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | EMT6 |
