Technical Specifications of IXTN660N04T4
| Datasheet |  IXTN660N04T4 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | IXYS |
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| Series | TrenchT4? |
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| Packaging | Bulk |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Current Sensing |
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| Drain to Source Voltage (Vdss) | 40V |
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| Current - Continuous Drain (Id) @ 25°C | 660A (Tc) |
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| Rds On (Max) @ Id, Vgs | 0.85 mOhm @ 100A, 10V |
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| Vgs(th) (Max) @ Id | 4V @ 250μA |
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| Gate Charge (Qg) @ Vgs | 860nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 44000pF @ 25V |
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| Power - Max | 1040W |
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| Operating Temperature | -55°C ~ 175°C (TJ) |
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| Mounting Type | Chassis Mount |
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| Package / Case | SOT-227-4, miniBLOC |
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| Supplier Device Package | SOT-227B |
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