Technical Specifications of GT10J312(Q)
| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Tube |
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| IGBT Type | - |
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| Voltage - Collector Emitter Breakdown (Max) | 600V |
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| Current - Collector (Ic) (Max) | 10A |
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| Current - Collector Pulsed (Icm) | 20A |
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| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
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| Power - Max | 60W |
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| Switching Energy | - |
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| Input Type | Standard |
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| Gate Charge | - |
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| Td (on/off) @ 25°C | 400ns/400ns |
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| Test Condition | 300V, 10A, 100 Ohm, 15V |
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| Reverse Recovery Time (trr) | 200ns |
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| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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| Mounting Type | Surface Mount |
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| Supplier Device Package | TO-220SM |
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