Technical Specifications of GT60N321(Q)
| Datasheet |  GT60N321(Q) datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Tube |
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| IGBT Type | - |
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| Voltage - Collector Emitter Breakdown (Max) | 1000V |
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| Current - Collector (Ic) (Max) | 60A |
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| Current - Collector Pulsed (Icm) | 120A |
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| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 60A |
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| Power - Max | 170W |
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| Switching Energy | - |
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| Input Type | Standard |
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| Gate Charge | - |
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| Td (on/off) @ 25°C | 330ns/700ns |
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| Test Condition | - |
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| Reverse Recovery Time (trr) | 2.5μs |
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| Package / Case | TO-3PL |
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| Mounting Type | Through Hole |
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| Supplier Device Package | TO-3P(LH) |
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