Technical Specifications of STW48N60M2-4
Datasheet | STW48N60M2-4 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | STMicroelectronics |
Series | MDmesh? M2 |
Packaging | Tube |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
Rds On (Max) @ Id, Vgs | 70 mOhm @ 21A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Gate Charge (Qg) @ Vgs | 70nC @ 10V |
Input Capacitance (Ciss) @ Vds | 3060pF @ 100V |
Power - Max | 300W |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-4 |
Supplier Device Package | TO-247-4L |
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