Technical Specifications of 2N7335
| Datasheet |  2N7335 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Arrays |
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| Manufacturer | Microsemi Corporation |
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| Series | - |
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| Packaging | Bulk |
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| FET Type | 4 P-Channel |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 100V |
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| Current - Continuous Drain (Id) @ 25°C | 750mA |
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| Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 500mA, 10V |
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| Vgs(th) (Max) @ Id | 4V @ 250μA |
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| Gate Charge (Qg) @ Vgs | - |
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| Input Capacitance (Ciss) @ Vds | - |
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| Power - Max | 1.4W |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Through Hole |
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| Package / Case | 14-DIP (0.300", 7.62mm) |
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| Supplier Device Package | MO-036AB |
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