Technical Specifications of FQT3P20TF_SB82100
Datasheet | FQT3P20TF_SB82100 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Fairchild Semiconductor |
Series | QFET? |
Packaging | Cut Tape (CT) |
FET Type | MOSFET P-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 670mA (Tc) |
Rds On (Max) @ Id, Vgs | 2.7 Ohm @ 335mA, 10V |
Vgs(th) (Max) @ Id | 5V @ 250μA |
Gate Charge (Qg) @ Vgs | 8nC @ 10V |
Input Capacitance (Ciss) @ Vds | 250pF @ 25V |
Power - Max | 2.5W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Supplier Device Package | SOT-223-4 |
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