Technical Specifications of SSM3J35CTC,L3F
| Datasheet |  SSM3J35CTC,L3F datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| FET Type | MOSFET P-Channel, Metal Oxide |
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| FET Feature | Logic Level Gate, 1.2V Drive |
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| Drain to Source Voltage (Vdss) | 20V |
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| Current - Continuous Drain (Id) @ 25°C | 250mA (Ta) |
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| Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 150mA, 4.5V |
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| Vgs(th) (Max) @ Id | 1V @ 100μA |
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| Gate Charge (Qg) @ Vgs | - |
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| Input Capacitance (Ciss) @ Vds | 42pF @ 10V |
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| Power - Max | 500mW |
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| Operating Temperature | 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | SC-101, SOT-883 |
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| Supplier Device Package | CST3C |
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