Technical Specifications of CSICD10-650 BK
Datasheet | CSICD10-650 BK datasheet |
Category | Discrete Semiconductor Products |
Family | Diodes - Rectifiers - Single |
Manufacturer | Central Semiconductor Corp |
Series | - |
Packaging | Tube |
Diode Type | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max) | 650V |
Current - Average Rectified (Io) | 10A (DC) |
Voltage - Forward (Vf) (Max) @ If | 1.7V @ 10A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0ns |
Current - Reverse Leakage @ Vr | 125μA @ 650V |
Capacitance @ Vr, F | 325pF @ 1V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | DPAK |
Operating Temperature - Junction | -55°C ~ 175°C |
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