Technical Specifications of CSICD10-650 BK
| Datasheet | CSICD10-650 BK datasheet |
| Category | Discrete Semiconductor Products |
| Family | Diodes - Rectifiers - Single |
| Manufacturer | Central Semiconductor Corp |
| Series | - |
| Packaging | Tube |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650V |
| Current - Average Rectified (Io) | 10A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 10A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 125μA @ 650V |
| Capacitance @ Vr, F | 325pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK |
| Operating Temperature - Junction | -55°C ~ 175°C |
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