Technical Specifications of BSS806N H6327
| Datasheet |  BSS806N H6327 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Infineon Technologies |
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| Series | OptiMOS? |
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| Packaging | Tape & Reel (TR) |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Logic Level Gate, 1.8V Drive |
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| Drain to Source Voltage (Vdss) | 20V |
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| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
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| Rds On (Max) @ Id, Vgs | 57 mOhm @ 2.3A, 2.5V |
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| Vgs(th) (Max) @ Id | 750mV @ 11μA |
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| Gate Charge (Qg) @ Vgs | 1.7nC @ 2.5V |
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| Input Capacitance (Ciss) @ Vds | 529pF @ 10V |
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| Power - Max | 500mW |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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| Supplier Device Package | PG-SOT23-3 |
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