Technical Specifications of IXYH100N65C3
| Datasheet |  IXYH100N65C3 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | IXYS |
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| Series | GenX3?, XPT? |
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| Packaging | Tube |
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| IGBT Type | PT |
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| Voltage - Collector Emitter Breakdown (Max) | 650V |
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| Current - Collector (Ic) (Max) | 200A |
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| Current - Collector Pulsed (Icm) | 420A |
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| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 70A |
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| Power - Max | 830W |
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| Switching Energy | 2.15mJ (on), 840μJ (off) |
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| Input Type | Standard |
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| Gate Charge | 164nC |
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| Td (on/off) @ 25°C | 28ns/106ns |
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| Test Condition | 400V, 50A, 3 Ohm, 15V |
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| Reverse Recovery Time (trr) | - |
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| Package / Case | TO-247-3 |
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| Mounting Type | Through Hole |
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| Supplier Device Package | TO-247 (IXYH) |
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