Technical Specifications of BFU725F/N1,115
Datasheet | BFU725F/N1,115 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - Bipolar (BJT) - RF |
Manufacturer | NXP Semiconductors |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 2.8V |
Frequency - Transition | 55GHz |
Noise Figure (dB Typ @ f) | 0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz |
Gain | 10dB ~ 24dB |
Power - Max | 136mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 10mA, 2V |
Current - Collector (Ic) (Max) | 40mA |
Mounting Type | Surface Mount |
Package / Case | SOT-343 Reverse Pinning |
Supplier Device Package | 4-SO |
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