Technical Specifications of BFS17WE6327HTSA1
| Datasheet |  BFS17WE6327HTSA1 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - RF |
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| Manufacturer | Infineon Technologies |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | NPN |
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| Voltage - Collector Emitter Breakdown (Max) | 15V |
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| Frequency - Transition | 1.4GHz |
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| Noise Figure (dB Typ @ f) | 3.5dB ~ 5dB @ 800MHz |
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| Gain | - |
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| Power - Max | 280mW |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 2mA, 1V |
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| Current - Collector (Ic) (Max) | 25mA |
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| Mounting Type | Surface Mount |
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| Package / Case | SC-70, SOT-323 |
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| Supplier Device Package | PG-SOT323-3 |
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