Technical Specifications of BFP640H6327XTSA1
| Datasheet |  BFP640H6327XTSA1 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - RF |
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| Manufacturer | Infineon Technologies |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | NPN |
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| Voltage - Collector Emitter Breakdown (Max) | 4.5V |
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| Frequency - Transition | 40GHz |
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| Noise Figure (dB Typ @ f) | 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz |
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| Gain | 12.5dB |
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| Power - Max | 200mW |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 30mA, 3V |
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| Current - Collector (Ic) (Max) | 50mA |
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| Mounting Type | Surface Mount |
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| Package / Case | SC-82A, SOT-343 |
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| Supplier Device Package | PG-SOT343-4 |
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