Technical Specifications of IXYB82N120C3H1
| Datasheet |  IXYB82N120C3H1 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | IXYS |
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| Series | GenX3?, XPT? |
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| Packaging | Tube |
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| IGBT Type | - |
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| Voltage - Collector Emitter Breakdown (Max) | 1200V |
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| Current - Collector (Ic) (Max) | 164A |
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| Current - Collector Pulsed (Icm) | 320A |
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| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 82A |
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| Power - Max | 1040W |
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| Switching Energy | 4.95mJ (on), 2.78mJ (off) |
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| Input Type | Standard |
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| Gate Charge | 215nC |
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| Td (on/off) @ 25°C | 29ns/192ns |
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| Test Condition | 600V, 80A, 2 Ohm, 15V |
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| Reverse Recovery Time (trr) | 420ns |
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| Package / Case | TO-264-3, TO-264AA |
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| Mounting Type | Through Hole |
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| Supplier Device Package | PLUS264? |
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