Navigation
Home
About us
Products
Manufacturers
RFQ
Service
FAQ
Contact us
ICRFQ.com - Electronic Components Distributor in China Since 2003
We make your sourcing easier!
Get A Fast Quote Worldwide!
[email protected]
Home > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > NP109N055PUJ-E1B-AY

NP109N055PUJ-E1B-AY

Manufacturer Part Number NP109N055PUJ-E1B-AY
Manufacturer Renesas Electronics America
Description MOSFET N-CH 55V MP-25ZP/TO-263
Lead Free Status / RoHS Status Lead free / RoHS Compliant
NP109N055PUJ-E1B-AY Price

Technical Specifications of NP109N055PUJ-E1B-AY

Datasheet NP109N055PUJ-E1B-AY datasheet
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerRenesas Electronics America
Series-
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C110A (Ta)
Rds On (Max) @ Id, Vgs3.2 mOhm @ 55A, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Gate Charge (Qg) @ Vgs180nC @ 10V
Input Capacitance (Ciss) @ Vds10350pF @ 25V
Power - Max1.8W
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263
<   Previous Product Next Product   >
Home > Products

Electronic Components and Parts

NP109N055PUJ-E1B-AY

Manufacturer Part Number NP109N055PUJ-E1B-AY
Manufacturer Renesas Electronics America
Description MOSFET N-CH 55V MP-25ZP/TO-263
Lead Free Status / RoHS Status Lead free / RoHS Compliant
NP109N055PUJ-E1B-AY Price

Technical Specifications of NP109N055PUJ-E1B-AY

Datasheet NP109N055PUJ-E1B-AY datasheet
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerRenesas Electronics America
Series-
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C110A (Ta)
Rds On (Max) @ Id, Vgs3.2 mOhm @ 55A, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Gate Charge (Qg) @ Vgs180nC @ 10V
Input Capacitance (Ciss) @ Vds10350pF @ 25V
Power - Max1.8W
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263
We can supply Renesas Electronics America part# NP109N055PUJ-E1B-AY. Use the request quote form to request NP109N055PUJ-E1B-AY pirce and lead time. RANTLE EAST ELECTRONIC - ICRFQ.com is an independent stocking distributor of electronic components. With 5+ Million line items of available electronic components can ship in short lead-time, over 300 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NP109N055PUJ-E1B-AY. The price and lead time for NP109N055PUJ-E1B-AY depending on the quantity required, availability and warehouse location. Contact us today and our sales representative will provide you price and delivery on Part# NP109N055PUJ-E1B-AY. We look forward to doing business with you.

Related parts for NP109N055PUJ-E1B-AY

VTEUMLJANF-35.328000
VTEUMLJANF-35.328000
Taitien
35.328MHz CMOS VCXO Oscillator Surface Mount 3.3V 20mA Enable/Disable

ASTMUPCFL-33-30.000MHZ-LJ-E-T
ASTMUPCFL-33-30.000MHZ-LJ-E-T
Abracon LLC
30MHz LVCMOS MEMS (Silicon) Oscillator Surface Mount 3.3V 36mA Enable/Disable

9C16076001
9C16076001
TXC CORPORATION
16MHz ±30ppm Crystal 18pF -40°C ~ 85°C Surface Mount HC49/US

SIT1602AIU3-30S
SIT1602AIU3-30S
SiTIME
3.75MHz ~ 77.76MHz HCMOS, LVCMOS MEMS (Silicon) Programmable Oscillator Surface Mount 3V 4.5mA Standby

DSC400-1111Q0043KI2
DSC400-1111Q0043KI2
Microchip Technology
LVCMOS MEMS (Silicon) Pin Configurable Oscillator 20-VFQFN Exposed Pad 2.25 V ~ 3.6 V Enable/Disable

VS-150K60A
VS-150K60A
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 150A DO205AA

IRKT42/14A
IRKT42/14A
Vishay Semiconductor Diodes Division
SCR DBL 2SCR 1400V 40A ADD-A-PAK

GP2D006A060A
GP2D006A060A
Global Power Technologies Group
DIODE SCHOTTKY 600V 6A TO220-2

MRF5S21130HSR3
MRF5S21130HSR3
Freescale Semiconductor - NXP
FET RF 65V 2.17GHZ NI-880S

BSS159NH6327XTSA2
BSS159NH6327XTSA2
Infineon Technologies
MOSFET N-CH 60V 230MA SOT-23

JAN1N986CUR-1
JAN1N986CUR-1
Microsemi IRE Division
DIODE ZENER 110V 500MW DO213AA

AOU2N60
AOU2N60
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 2A TO251

CZRW55C4V3-G
CZRW55C4V3-G
Comchip Technology
DIODE ZENER 4.3V 500MW SOD123

MMSZ5243C-G3-18
MMSZ5243C-G3-18
Vishay Semiconductor Diodes Division
DIODE ZENER 13V 500MW SOD123

IRLML6401TR
IRLML6401TR
Infineon Technologies
MOSFET P-CH 12V 4.3A SOT-23

MMSZ4689ET1G
MMSZ4689ET1G
ON Semiconductor
DIODE ZENER 5.1V 500MW SOD123

US1JFL-TP
US1JFL-TP
Micro Commercial Co
DIODE GEN PURP 600V 1A DO221AC

SM5818PL-TP
SM5818PL-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 1A SOD123FL

ACGRBT201-HF
ACGRBT201-HF
Comchip Technology
DIODE GEN PURP 200V 2A DO214AA

60APU06
60APU06
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 60A TO247AC

<   Previous Product Next Product   >

Related keywords for NP109N055PUJ-E1B-AY