Technical Specifications of 2N3906-G
Datasheet | 2N3906-G datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - Bipolar (BJT) - Single |
Manufacturer | Comchip Technology |
Series | - |
Packaging | Tape & Box (TB) |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 200mA |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 100mA, 1V |
Power - Max | - |
Frequency - Transition | 250MHz |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package | TO-92 |
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