Technical Specifications of SSM6H19NU,LF
| Datasheet |  SSM6H19NU,LF datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Logic Level Gate, 1.8V Drive |
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| Drain to Source Voltage (Vdss) | 40V |
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| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
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| Rds On (Max) @ Id, Vgs | 185 mOhm @ 1A, 8V |
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| Vgs(th) (Max) @ Id | 1.2V @ 1mA |
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| Gate Charge (Qg) @ Vgs | 2.2nC @ 4.2V |
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| Input Capacitance (Ciss) @ Vds | 130pF @ 10V |
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| Power - Max | 1W |
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| Operating Temperature | 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | 6-UDFN Exposed Pad |
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| Supplier Device Package | 6-UDFN (2x2) |
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