Technical Specifications of EPC2025ENGR
| Datasheet |  EPC2025ENGR datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | EPC |
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| Series | eGaN? |
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| Packaging | Tray |
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| FET Type | GaNFET N-Channel, Gallium Nitride |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 300V |
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| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
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| Rds On (Max) @ Id, Vgs | 150 mOhm @ 3A, 5V |
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| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
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| Gate Charge (Qg) @ Vgs | 1.85nC @ 5V |
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| Input Capacitance (Ciss) @ Vds | 194pF @ 240V |
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| Power - Max | - |
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| Operating Temperature | -40°C ~ 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | Die |
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| Supplier Device Package | Die Outline (12-Solder Bar) |
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